preliminary tsm 7n 60 6 00v n - channel power mosfet 1/7 version: preliminary i to - 220 to - 220 general description the tsm 7n60 n - channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. features low r ds(on) 1.2 (max.) low gate charge typical @ 28nc (typ.) low crss typical @ 12pf (typ.) fast switching ordering information part no. package packing tsm 7 n60cz c0 to - 220 50pcs / tube tsm 7 n60ci c0 i to - 220 50pcs / tube absolute maximum rating ( ta = 25 o c unless otherwise note d) parameter symbol limit unit drain - source voltage v ds 600 v gate - source voltage v gs 30 v ta = 25 c 7 a continuous drain current ta = 100? i d 3.2 a pulsed drain current * i dm 28 a avalanche current (single) (note 2) i as 7 a single pulse avalanche energy (note 2) e as 230 mj avalanche current (repetitive) (note 1) i ar 7 a repetitive avalanche energy (note 1) e ar 7.5 mj maximum power dissipation @ ta = 25 o c p d 65 w operating junction temperature t j 150 ? storage temperature range t stg - 55 to + 150 o c * limited by maximum junction temperature product summary v ds (v) r ds(on) () i d (a) 6 00 1.2 @ v gs =10v 3.5 block diagram n- channel mosfet pin definition : 1. gate 2. drain 3. source
preliminary tsm 7 n 60 6 00v n - channel power mosfet 2 / 7 version: preliminary thermal performance parameter symbol limit unit thermal resistance - junction to case r? jc 1.92 o c/w thermal resistance - junction to ambient r? ja 83.3 o c/w note s : surface mounted on fr4 board t 10 sec electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 600 -- -- v drain - source on - state resistance v gs = 10v, i d = 3.5a r ds(on) -- 1 .0 1.2 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 .0 -- 4 .0 v zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transfer conductance v ds = 10v, i d = 3.5a g fs -- 7.3 -- s diode forward voltage i s = 7a, v gs = 0v v sd -- -- 1.4 v dynamic b total gate charge q g -- 28 42 gate - source charge q gs -- 5.5 8.3 gate - drain charge v ds = 300v, i d = 7a, v gs = 10v q gd -- 11 17 nc input capacitance c iss -- 950 1430 output capacitance c oss -- 85 130 reverse transfer capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c rss -- 12 18 pf switching c turn - on delay time t d(on) -- 16 -- turn - on rise time t r -- 60 -- turn - off delay time t d(off) -- 80 -- turn - off fall time v gs = 10v, i d = 7a, v dd = 300v, r g = 25 t f -- 65 -- ns reverse recovery time t f r -- 365 -- ns reverse recovery charge v gs = 0v, i s = 7a , di f /dt = 100a/us q f r -- 4.23 -- uc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. v dd = 50v, i as =7a, l=9.8mh, r g =27 3. p ulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operating temperature
preliminary tsm 7 n 60 6 00v n - channel power mosfet 3 / 7 version: preliminary gate charge test circuit & waveform re sistive switching test circuit & waveform e as test circuit & waveform
preliminary tsm 7 n 60 6 00v n - channel power mosfet 4 / 7 version: preliminary diode reverse recovery time test circuit & waveform
preliminary tsm 7n 60 6 00v n - channel power mosfet 5/7 version: preliminary ito - 220 mechanical drawing i to -2 20 dim ension millimeters inches dim min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
preliminary tsm 7 n 60 6 00v n - channel power mosfet 6 / 7 version: preliminary to - 220 mechanical drawing to - 220 dimension millimeters inches dim min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
preliminary tsm 7 n 60 6 00v n - channel power mosfet 7 / 7 version: preliminary notice specifications of the product s displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, expres s or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
|
